2SC4140 The 2SC4140 is a silicon NPN triple diffused planar transistor from Sanken. It features a VCEO of 400V, IC of 18A, and is housed in a TO-3P package.
Mfr Part #:

2SC4140

Available from 2 distributors
Mfr Name: Sanken
Sanken
The 2SC4140 is a silicon NPN triple diffused planar transistor from Sanken. It features a VCEO of 400V, IC of 18A, and is housed in a TO-3P package.
Total Stock: 1,264 pcs
$ Price Range: $0.67 - $1.40

2SC4140 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
682 pcs
682 pcs On Request 1 On Request On Request 11+ On Request On Request
Non-Authorised Inventory information
582 pcs
582 pcs On Request 1 On Request On Request On Request On Request On Request

2SC4140 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Collector-Base Capacitance (Cob)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Fall Time (tf)
Frequency
Mounting Type
Operating Temperature
Power
Storage Time (tstg)
Supplier Device Package
Transistor Type
Turn-On Time (ton)
Vbe Saturation (Vbe(sat))
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

2SC4140 Description

Short technical summary and product information.

The 2SC4140 is a silicon NPN triple diffused planar transistor designed for high voltage and high speed switching applications. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 400V, collector-base voltage (VCBO) of 500V, and emitter-base voltage (VEBO) of 10V. The continuous collector current (IC) is rated at 18A, with a pulse capability of 36A. Power dissipation is 130W at a case temperature of 25°C. DC current gain (hFE) ranges from 10 to 30 at IC=10A and VCE=4V. Saturation voltages are low: VCE(sat) max 0.5V and VBE(sat) max 1.3V at IC=10A, IB=2A. The transistor offers fast switching with typical turn-on time of 1µs, storage time of 3µs, and fall time of 0.5µs under specified conditions. Transition frequency (fT) is 10 MHz typical, and collector-base capacitance (Cob) is 165 pF typical. The device is housed in a TO-3P-3 (SC-65-3) through-hole package, weighing 6.0g. It is suitable for switching regulator and general purpose power supply applications.

2SC4140 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SC4140 Silicon NPN Triple Diffused Planar Transistor
Subcategory: Single NPN

2SC4140 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC4140 Estimated Pricing

Qty Low High
1+ $1.40 $1.40
10+ $1.25 $1.25
25+ $1.13 $1.13
100+ $1.03 $1.03
250+ $0.93 $0.93
500+ $0.83 $0.83
1,000+ $0.70 $0.70
2,500+ $0.67 $0.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC4140 Features

  • NPN triple diffused planar transistor.
  • Maximum VCEO of 400V.
  • Continuous collector current 18A.
  • Fast switching with 1µs turn-on time.
  • TO-3P through-hole package.

2SC4140 Applications

  • Used in switching regulator circuits.
  • Suitable for general purpose high voltage switching.
  • Ideal for power supply applications.

2SC4140 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

400V.

What is the package type?

TO-3P-3 (SC-65-3).

What is the operating temperature range?

Maximum junction temperature 150°C, storage temperature -55 to +150°C.

Is it RoHS compliant?

Yes, RoHS3 compliant.

What is the DC current gain?

10 to 30 at IC=10A, VCE=4V.

What is the saturation voltage?

VCE(sat) max 0.5V at IC=10A, IB=2A.

What is the transition frequency?

10 MHz typical.

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