2SC4138 The 2SC4138 is an NPN silicon triple diffused planar transistor from Sanken. It features a collector-emitter breakdown voltage of 400V, continuous collector current of 10A, and power dissipation of 80W.
Mfr Part #:

2SC4138

Available from 2 distributors
Mfr Name: Sanken
Sanken
The 2SC4138 is an NPN silicon triple diffused planar transistor from Sanken. It features a collector-emitter breakdown voltage of 400V, continuous collector current of 10A, and power dissipation of 80W.
Total Stock: 2,008 pcs

2SC4138 Available from 2 distributors

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2SC4138 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Base Current (IB)
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Current (Maximum @ Pulse)
Collector-Base Voltage (VCBO)
Collector-Emitter Breakdown Voltage (V(BR)CEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
SVHC Present
Storage Temperature
Storage Temperature Range (TSTG)
Supplier Device Package
Switching Time - Fall (tf)
Switching Time - Storage (tstg)
Switching Time - Turn-on (ton)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SC4138 Description

Short technical summary and product information.

The 2SC4138 is an NPN silicon triple diffused planar transistor designed for high voltage and high speed switching applications. It is commonly used in switching regulators and general purpose power circuits.

 

Key electrical specifications include a collector-emitter breakdown voltage of 400V (minimum), collector-base voltage of 500V, continuous collector current of 10A (20A pulse), and power dissipation of 80W at case temperature 25°C. The DC current gain (hFE) ranges from 10 to 30 at Vce=4V and Ic=6A. The collector-emitter saturation voltage is 0.5V maximum at Ib=1.2A and Ic=6A. The transition frequency is 10 MHz typical. Switching times are 1µs turn-on, 3µs storage, and 0.5µs fall time.

 

The transistor is housed in a TO-3P-3 (SC-65-3) through-hole package. It is RoHS compliant. The operating junction temperature range is up to 150°C, with storage temperature from -55 to +150°C.

2SC4138 Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: 2SC4138 NPN Silicon Triple Diffused Planar Transistor
Subcategory: NPN Power Transistor

2SC4138 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SC4138 Features

  • NPN triple diffused planar transistor.
  • Collector-emitter voltage rating of 400V.
  • Continuous collector current of 10A.
  • Power dissipation of 80W.
  • Fast switching with 1µs turn-on time.

2SC4138 Applications

  • Ideal for switching regulator circuits.
  • Suitable for general purpose high voltage switching.
  • Used in power supply applications.

2SC4138 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

400V minimum at Ic=25mA.

What package does the 2SC4138 come in?

TO-3P-3 (SC-65-3) through-hole package.

What is the maximum junction temperature?

150°C.

Is the 2SC4138 RoHS compliant?

Yes, the manufacturer states RoHS compliance.

What is the DC current gain (hFE)?

10 to 30 at Vce=4V, Ic=6A.

What is the maximum collector current?

10A continuous, 20A pulse.

What are the switching times?

Turn-on time 1µs, storage time 3µs, fall time 0.5µs.

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