| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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475,789 pcs
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475789 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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9,931 pcs
|
9931 pcs | On Request | 1 | On Request | On Request | /+ | On Request | On Request |
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The Toshiba 2SC4117-GR is a single NPN bipolar junction transistor (BJT) designed for small signal applications. It is housed in a compact SOT-323 surface-mount package, making it suitable for space-constrained designs.
Key electrical specifications include a maximum DC collector current (Ic) of 100mA and a maximum collector emitter voltage (Vceo) of 120V. The transistor also offers a maximum collector base voltage (VCBO) of 120V and a maximum emitter base voltage (VEBO) of 5V. With a minimum DC current gain (hFE) of 200 and a maximum transition frequency (ft) of 100MHz, it is well-suited for various amplification and switching tasks.
The device has a maximum power dissipation (Pd) of 100mW and operates within a temperature range of -55°C to 125°C. Its surface-mount SOT-323 package requires specific soldering techniques for reliable assembly. The transistor's NPN polarity and single configuration are standard for many general-purpose amplification circuits.
Manufactured in Japan, the 2SC4117-GR series transistor is a reliable component for electronic circuits requiring a small, general-purpose NPN transistor with moderate voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC collector current is 100mA.
The maximum collector-emitter voltage (Vceo) is 120V.
It comes in a SOT-323 surface-mount package.
The maximum operating temperature is 125°C.
The minimum DC current gain (hFE) is 200.
The maximum transition frequency is 100MHz.