2SC4117-GR The Toshiba 2SC4117-GR is a small signal NPN bipolar transistor. It features a maximum collector emitter voltage of 120V and a maximum collector current of 100mA.
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2SC4117-GR

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SC4117-GR is a small signal NPN bipolar transistor. It features a maximum collector emitter voltage of 120V and a maximum collector current of 100mA.
✓ Total Stock: 485,720 pcs
$ Price Range: $0.99

2SC4117-GR Available from 2 distributors

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475,789 pcs
475789 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
9,931 pcs
9931 pcs On Request 1 On Request On Request /+ On Request On Request

2SC4117-GR Specifications Quick View

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2SC4117-GR Description

Short technical summary and product information.

The Toshiba 2SC4117-GR is a single NPN bipolar junction transistor (BJT) designed for small signal applications. It is housed in a compact SOT-323 surface-mount package, making it suitable for space-constrained designs.

 

Key electrical specifications include a maximum DC collector current (Ic) of 100mA and a maximum collector emitter voltage (Vceo) of 120V. The transistor also offers a maximum collector base voltage (VCBO) of 120V and a maximum emitter base voltage (VEBO) of 5V. With a minimum DC current gain (hFE) of 200 and a maximum transition frequency (ft) of 100MHz, it is well-suited for various amplification and switching tasks.

 

The device has a maximum power dissipation (Pd) of 100mW and operates within a temperature range of -55°C to 125°C. Its surface-mount SOT-323 package requires specific soldering techniques for reliable assembly. The transistor's NPN polarity and single configuration are standard for many general-purpose amplification circuits.

 

Manufactured in Japan, the 2SC4117-GR series transistor is a reliable component for electronic circuits requiring a small, general-purpose NPN transistor with moderate voltage and current handling capabilities.

2SC4117-GR Quick Information

Product Type: Bipolar Transistor
Series: 2SC4117
Canonical Name: Toshiba 2SC4117-GR NPN Transistor
Subcategory: Single

2SC4117-GR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC4117-GR Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC4117-GR Features

  • NPN bipolar junction transistor.
  • 120V maximum collector emitter voltage.
  • 100mA maximum collector current.
  • SOT-323 surface-mount package.
  • 100MHz maximum transition frequency.

2SC4117-GR Applications

  • Suitable for small signal amplification.
  • Used in general purpose switching circuits.
  • Ideal for space-constrained designs.
  • Component for electronic circuit boards.

2SC4117-GR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector current of the 2SC4117-GR?

The maximum DC collector current is 100mA.

What is the collector-emitter voltage rating?

The maximum collector-emitter voltage (Vceo) is 120V.

What package does the 2SC4117-GR come in?

It comes in a SOT-323 surface-mount package.

What is the operating temperature range?

The maximum operating temperature is 125°C.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 200.

What is the transition frequency?

The maximum transition frequency is 100MHz.

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