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2SC4102T106R NPN bipolar transistor from ROHM Semiconductor. Rated for 120V collector-emitter voltage, 50mA collector current, and 200mW power dissipation in a surface-mount UMT3 package.
Mfr Part #:

2SC4102T106R

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN bipolar transistor from ROHM Semiconductor. Rated for 120V collector-emitter voltage, 50mA collector current, and 200mW power dissipation in a surface-mount UMT3 package.
✓ Total Stock: 270 pcs
$ Price Range: $0.10 - $0.57

2SC4102T106R Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
270 pcs
On Request
270 pcs On Request 1 On Request On Request 19+ On Request On Request
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2SC4102T106R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2SC4102T106R Description

Short technical summary and product information.

The 2SC4102T106R is an NPN bipolar junction transistor manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage (Vceo) of 120V, a maximum collector current (Ic) of 50mA, and a power dissipation (Pd) of 200mW. The DC current gain (hFE) is a minimum of 180 when tested at Ic=2mA and Vce=6V. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 500mV at Ib=1mA and Ic=10mA. The transistor has a typical transition frequency (ft) of 140MHz, making it suitable for low-power switching and amplification applications up to VHF frequencies.

 

The device is designed for surface-mount assembly and is offered in the SC-70/SOT-323 package, with the supplier device package designated as UMT3. It can operate at a maximum junction temperature of 150°C. The part is listed as RoHS3 compliant, REACH unaffected, and has a Moisture Sensitivity Level (MSL) of 1 (unlimited). These environmental compliance ratings support its use in a wide range of consumer and industrial electronic products where lead-free and restricted substance regulations apply.

2SC4102T106R Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SC4102T106R NPN Bipolar Transistor
Subcategory: NPN Bipolar Transistor

2SC4102T106R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SC4102T106R Estimated Pricing

Qty Low High
1+ $0.57 $0.57
10+ $0.35 $0.35
100+ $0.22 $0.22
500+ $0.17 $0.17
1,000+ $0.15 $0.15
3,000+ $0.13 $0.13
6,000+ $0.12 $0.12
9,000+ $0.11 $0.11
15,000+ $0.10 $0.10
21,000+ $0.10 $0.10
30,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC4102T106R Features

  • NPN transistor with 120V collector-emitter voltage.
  • Maximum collector current of 50mA.
  • Power dissipation rated at 200mW.
  • DC current gain min 180 at 2mA/6V.
  • Transition frequency typical 140MHz.

2SC4102T106R Applications

  • Suitable for low-power switching circuits.
  • Used in signal amplification stages.
  • Ideal for driver circuits in portable devices.
  • Can be used in audio preamplifiers.

2SC4102T106R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SC4102T106R?

120V.

What is the maximum collector current?

50mA.

What is the power dissipation rating?

200mW.

What is the DC current gain (hFE) at 2mA/6V?

Minimum 180.

What is the transition frequency?

Typical 140MHz.

What package is the 2SC4102T106R available in?

SC-70, SOT-323 (UMT3).

Is the 2SC4102T106R RoHS compliant?

Yes, listed as RoHS3 compliant.

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