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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Cut-Off Current (Max) | |
| Collector-Base Breakdown Voltage (Min) | |
| Collector-Emitter Breakdown Voltage (Min) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current (Max) | |
| Emitter-Base Breakdown Voltage (Min) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Typ) | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| TSTG (Minimum/Maximum) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum/Maximum @ IC=8 A, VCE=4 V) |
The 2SC3858 is a silicon NPN triple diffused planar transistor designed by Sanken Electric. It is optimized for audio amplifier output stages and general purpose power switching applications. The transistor features a collector-emitter breakdown voltage (VCEO) of 200V minimum and a collector current (IC) rating of 17A maximum. DC current gain (hFE) ranges from 50 to 180 at VCE=4V, IC=8A. The saturation voltage (VCE(sat)) is typically 2.5V maximum at IC=10A, IB=1A. Transition frequency (fT) is 20 MHz typical, and output capacitance (COB) is 300 pF typical.
Power dissipation is rated at 200W with the case temperature at 25°C. The device is housed in a through-hole MT-200 package (3-ESIP). The junction temperature is limited to 150°C maximum, with a storage temperature range of -55°C to +150°C. The 2SC3858 is the complementary NPN type to the 2SA1494 PNP transistor, making it suitable for complementary push-pull amplifier designs.
This transistor is RoHS3 compliant and REACH unaffected per the manufacturer. It is classified as obsolete by Sanken, so availability should be verified with distributors.
The collector-emitter breakdown voltage (VCEO) is 200V minimum, collector-base breakdown (VCBO) is 200V minimum, and emitter-base breakdown (VEBO) is 6V minimum.
The 2SC3858 is packaged in a through-hole MT-200 (3-ESIP) package.
The junction temperature (Tj) is rated up to 150°C maximum. Storage temperature range is -55°C to +150°C.
Yes, the 2SC3858 is RoHS3 compliant per the manufacturer.
The complementary PNP transistor is the 2SA1494.
The DC current gain ranges from 50 to 180 at VCE=4V, IC=8A.