2SC3838KT146N NPN silicon RF transistor designed for UHF frequency converter and local oscillator applications. Rated for 11V collector-emitter voltage and 50mA collector current.
Mfr Part #:

2SC3838KT146N

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN silicon RF transistor designed for UHF frequency converter and local oscillator applications. Rated for 11V collector-emitter voltage and 50mA collector current.
Total Stock: 5,838 pcs
$ Price Range: $0.16 - $0.50

2SC3838KT146N Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,838 pcs
5838 pcs On Request 1 On Request On Request 08+ On Request On Request

2SC3838KT146N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cut-off Current (ICBO)
Collector-Base Time Constant (rbb'·Cc)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cut-off Current (IEBO)
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Noise Figure (NF)
Operating Temperature
Output Capacitance (Cob)
Power
Reel Diameter
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Tape & Reel Quantity
Tape Width
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SC3838KT146N Description

Short technical summary and product information.

The ROHM Semiconductor 2SC3838KT146N is a high-frequency NPN bipolar junction transistor optimized for UHF amplifier and oscillator circuits.

 

Key electrical specifications include a maximum collector-emitter voltage of 11V, a maximum collector current of 50mA, and a power dissipation of 200mW. The transistor features a typical transition frequency (ft) of 3.2GHz and a minimum ft of 1.4GHz, making it suitable for applications up to UHF frequencies. DC current gain (hFE) ranges from 56 to 270 at Vce=10V, Ic=5mA. The collector-emitter saturation voltage is 500mV maximum at Ic=10mA, Ib=5mA.

 

The device is offered in a surface-mount SOT-346 (SMT3) package, compatible with TO-236-3, SC-59, and SOT-23-3 footprints. Packaging is tape and reel with 3000 pieces per reel on 180mm reels with 8mm tape width. The operating junction temperature range is -55°C to +150°C.

2SC3838KT146N Quick Information

Product Type: RF Bipolar Transistor
Series: 2SC3838K
Canonical Name: ROHM Semiconductor 2SC3838KT146N NPN RF Amplifier Transistor
Subcategory: RF NPN Transistor

2SC3838KT146N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC3838KT146N Estimated Pricing

Qty Low High
1+ $0.50 $0.50
10+ $0.31 $0.31
100+ $0.20 $0.20
1,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC3838KT146N Features

  • 3.2GHz typical transition frequency (ft).
  • Low noise figure of 3.5dB.
  • Surface mount SMT3 package (SOT-346).
  • 56-270 DC current gain range.
  • 200mW maximum power dissipation.

2SC3838KT146N Applications

  • UHF frequency converter circuits.
  • Local oscillator circuits.
  • RF amplifier stages.
  • Wireless communication modules.

2SC3838KT146N FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of the 2SC3838KT146N?

The maximum collector-emitter voltage is 11V.

What is the typical transition frequency (ft) of this transistor?

The typical transition frequency is 3.2GHz, with a minimum of 1.4GHz.

What package is the 2SC3838KT146N available in?

The transistor is supplied in a SOT-346 (SMT3) surface mount package, also described as TO-236-3, SC-59, or SOT-23-3.

What is the operating junction temperature range?

The junction temperature range is -55°C to +150°C.

What is the DC current gain (hFE) range?

The hFE range is 56 minimum to 270 maximum at Vce=10V and Ic=5mA.

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