| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC3649T-TD-E is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose amplification and switching applications requiring up to 160V collector-emitter voltage and 1.5A collector current.
The transistor exhibits a minimum DC current gain (hFE) of 100 at Ic=100mA and Vce=5V, with a typical transition frequency of 120MHz. The Vce saturation voltage is a maximum of 450mV at Ib=50mA and Ic=500mA, enabling efficient switching. The maximum power dissipation is 500mW, and the maximum junction temperature is 150°C.
This device is offered in a surface-mount TO-243AA (PCP) package, suitable for automated assembly. It is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.19 | $1.19 |
| 10+ | $0.75 | $0.75 |
| 100+ | $0.49 | $0.49 |
| 500+ | $0.38 | $0.38 |
| 1,000+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Vce is 160 V.
It comes in a TO-243AA (PCP) surface mount package.
The maximum junction temperature is 150°C.
Yes, it is RoHS3 compliant.
The maximum collector current is 1.5 A.
The minimum hFE is 100 at Ic=100mA, Vce=5V.
The typical transition frequency is 120 MHz.