2SC3649S-TD-H

The 2SC3649S-TD-H is an NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling. The transistor features a maximum collector-emitter breakdown voltage (VCEO) of 160V and a maximum collector current (IC) of 1.5A. With a typical transition frequency (fT) of 120MHz, it is suitable for high-frequency circuits up to the VHF range. The device offers a DC current gain (hFE) of at least 140 at 100mA collector current and 5V collector-emitter voltage. The collector-emitter saturation voltage is typically 450mV at 50mA base current and 500mA collector current. The maximum power dissipation is 500mW, and the junction temperature can reach up to 150°C. The transistor is housed in a TO-243AA (PCP) surface-mount package, making it suitable for compact PCB designs. It is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited). This component is commonly used in power management, driver circuits, and signal amplification stages where a balance of voltage, current, and frequency performance is required.