| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
329,710 pcs
|
329710 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC3649S-TD-E is an NPN bipolar junction transistor from On Semiconductor. It features a collector-emitter voltage rating of 160 V and a continuous collector current of 1.5 A. The device offers a minimum DC current gain (hFE) of 100 at 100 mA collector current and 5 V collector-emitter voltage, with a maximum Vce saturation voltage of 450 mV at 50 mA base current and 500 mA collector current.
The transistor has a power dissipation of 500 mW and a transition frequency of 120 MHz. It is designed for surface-mount assembly in a TO-243AA package with a supplier device package of PCP. The operating junction temperature range extends up to 150°C. Typical applications include general-purpose switching and amplification in medium-voltage, low-power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
| 10+ | $0.65 | $0.65 |
| 100+ | $0.47 | $0.47 |
| 1,000+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
160 V.
1.5 A.
TO-243AA surface-mount package with supplier device package PCP.
150°C.
100 at Ic=100 mA, Vce=5 V.
RoHS3 Compliant (unverified).
120 MHz.