| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44,000 pcs
|
44000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC3646T-TD-E is an NPN bipolar junction transistor from ON Semiconductor. It is designed for general purpose switching and amplification applications. Key electrical specifications include a maximum collector-emitter voltage of 100 V, a maximum collector current of 1 A, and a power dissipation of 500 mW. The DC current gain (hFE) is minimum 100 at Ic=100 mA and Vce=5 V. The collector-emitter saturation voltage is 400 mV maximum at Ib=40 mA and Ic=400 mA. The transition frequency is typically 120 MHz, making it suitable for moderate frequency applications. The device is housed in a surface mount PCP package (TO-243AA case) and can operate at junction temperatures up to 150 °C. This transistor is suitable for use in a variety of low power electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.87 | $0.87 |
| 10+ | $0.54 | $0.54 |
| 100+ | $0.35 | $0.35 |
| 500+ | $0.26 | $0.26 |
| 1,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
Surface mount TO-243AA (PCP).
150°C.
Yes, listed as RoHS3 compliant, but unverified.
Minimum 100 at Ic=100mA, Vce=5V.
120 MHz typical.
Maximum 400 mV at Ib=40mA, Ic=400mA.