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2SC3646S-TD-E NPN bipolar transistor from On Semiconductor, rated at 100V collector-emitter voltage and 1A collector current. Surface mount in TO-243AA package with 500mW power dissipation.
Mfr Part #:

2SC3646S-TD-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor from On Semiconductor, rated at 100V collector-emitter voltage and 1A collector current. Surface mount in TO-243AA package with 500mW power dissipation.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.30 - $0.96

2SC3646S-TD-E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2SC3646S-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2SC3646S-TD-E Description

Short technical summary and product information.

The 2SC3646S-TD-E is an NPN bipolar junction transistor manufactured by On Semiconductor. It features a collector-emitter breakdown voltage (Vceo) of 100V and a continuous collector current rating of 1A. The device offers a DC current gain (hFE) of at least 100 at Ic=100mA and Vce=5V, and a maximum collector-emitter saturation voltage of 400mV at Ib=40mA and Ic=400mA. The transition frequency (fT) is 120MHz, making it suitable for switching and amplifier applications up to moderate frequencies.

 

The transistor is housed in a TO-243AA surface-mount package (supplier package designation PCP) and has a maximum power dissipation of 500mW. The operating junction temperature range extends to 150°C. It is listed as RoHS3 compliant with a moisture sensitivity level of 1, though this compliance data is unverified.

 

This component is commonly used in general-purpose switching, signal amplification, and driver circuits where medium voltage and current handling is required. The minimum hFE ensures consistent gain performance, and the low saturation voltage helps reduce power losses in on-state operation.

2SC3646S-TD-E Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: 2SC3646S-TD-E NPN Bipolar Transistor, 100V Vceo, 1A Ic, TO-243AA
Subcategory: NPN Single

2SC3646S-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC3646S-TD-E Estimated Pricing

Qty Low High
1+ $0.96 $0.96
10+ $0.60 $0.60
100+ $0.39 $0.39
500+ $0.30 $0.30
1,000+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC3646S-TD-E Features

  • NPN bipolar transistor with 100V Vceo rating.
  • Continuous 1A collector current capability.
  • Low saturation voltage: 400mV max at 400mA.
  • 120MHz transition frequency for general purpose use.
  • Surface mount TO-243AA package.

2SC3646S-TD-E Applications

  • General purpose switching and amplification circuits.
  • Use in power management and driver stages.
  • Suitable for signal processing in consumer electronics.
  • Ideal for medium voltage DC-DC converter designs.

2SC3646S-TD-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2SC3646S-TD-E?

The Vceo is 100V.

What package is the 2SC3646S-TD-E available in?

TO-243AA surface mount package (supplier package PCP).

What is the maximum operating junction temperature?

150°C.

Is the 2SC3646S-TD-E RoHS compliant?

Listed as RoHS3 compliant but unverified.

What is the DC current gain (hFE) of the 2SC3646S-TD-E?

Minimum hFE of 100 at Ic=100mA and Vce=5V.

What is the collector-emitter saturation voltage?

Maximum Vce(sat) of 400mV at Ib=40mA and Ic=400mA.

What is the transition frequency?

fT is 120MHz.

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