| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,755 pcs
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9755 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The 2SC3503FSTU is an NPN epitaxial silicon transistor from ON Semiconductor, designed for high voltage and general purpose amplification applications. It offers a collector-emitter breakdown voltage of 300V and a collector current rating of 100mA DC (200mA pulse). The device features a DC current gain (hFE) range of 160 to 320, ensuring excellent gain linearity for low total harmonic distortion.
This transistor is suitable for audio voltage amplifiers, current sources, CRT display video outputs, and general purpose amplifier circuits. It provides a high transition frequency of 150MHz and low reverse transfer capacitance of 1.8pF, making it effective for high frequency applications.
The 2SC3503FSTU is housed in a TO-126-3 through-hole package, allowing for easy mounting on printed circuit boards. It has a power dissipation of 7W at case temperature 25°C and operates over a junction temperature range of -55°C to 150°C. The device is RoHS compliant and complements the PNP transistor 2SA1381.
The collector-emitter breakdown voltage (VCEO) is 300V minimum.
The 2SC3503FSTU is available in a TO-126-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the 2SC3503FSTU is RoHS3 compliant.
The DC current gain (hFE) ranges from 160 to 320 at IC=10mA, VCE=10V.
The current gain bandwidth product (fT) is typically 150MHz at VCE=30V, IC=10mA.
The complementary PNP transistor is the 2SA1381.