| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC3444 is a Silicon NPN Epitaxial Transistor manufactured by ROHM Semiconductor, designed for high frequency amplification applications. This component features a high collector-emitter voltage (VCEO) of 60V and a maximum collector current (IC) of 1A, making it suitable for demanding applications.
Key electrical characteristics include a low collector-emitter saturation voltage (VCE(sat)) of 0.11V typical at 500mA collector current and 25mA base current, and a gain bandwidth product (fT) of 80MHz typical. The device has a collector dissipation (Pc) of 500mW at 25°C ambient temperature.
This transistor is housed in a compact SC-62 surface mount package, facilitating integration into space-constrained designs. Its complementary type is the 2SA1364. Applications include audio machines, VTRs, relay drive, and power supply circuits.
Maximum ratings include a collector-base voltage (VCBO) of 60V, emitter-base voltage (VEBO) of 6V, and a junction temperature (Tj) of up to 150°C. Storage temperature ranges from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
1A, with a peak of 2A.
55 to 300 at VCE=4V, IC=100mA.
0.11V at IC=500mA, IB=25mA.
80MHz typical.
SC-62 surface mount.
500mW at Ta=25°C.