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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC3419-Y is an NPN bipolar transistor manufactured by Toshiba. It is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 40V and a maximum collector-base voltage (VCB) of 40V. The emitter-base voltage (VEB) is rated at 5V. It can handle a continuous collector current (Ic) of up to 0.8A and has a collector power dissipation (Pc) of 5W. The DC current gain (hFE) ranges from 120 to 240, and it features a minimum transition frequency (fT) of 100MHz.
This transistor operates within a junction temperature range of -55 to +150°C. It is supplied in a TO-126F package, suitable for through-hole mounting.
The 2SC3419-Y has a complementary PNP transistor, the 2SA1356-Y. Various SMD versions and replacements are also available, indicating its common use in electronic designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SC3419-Y is 40V.
The continuous collector current rating for the 2SC3419-Y is 0.8A.
The DC current gain (hFE) for the 2SC3419-Y ranges from 120 to 240.
The operating junction temperature range for the 2SC3419-Y is -55 to +150°C.
The 2SC3419-Y is supplied in a TO-126F package.