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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC3419 is a Silicon NPN Epitaxial Transistor, utilizing a PCT Process. It is designed for medium-power amplifier applications and offers a low saturation voltage of 0.25 V (typ.) at 500 mA collector current and 50 mA base current. The transistor features a high collector power dissipation of 1.2 W at 25°C ambient temperature and 5 W at 25°C case temperature.
Key electrical characteristics include a collector-emitter breakdown voltage of 40 V, a maximum collector current of 800 mA, and a maximum base current of 80 mA. The DC current gain (hFE) ranges from 70 to 240 at 2V/50mA and 13 to 60 at 2V/0.8A. The transition frequency (fT) is typically 50 MHz at 2V/0.5A, with a maximum of 100 MHz. Collector output capacitance (Cob) is typically 10 pF at 10V/1MHz.
The device operates within a junction temperature range of 150°C and a storage temperature range of -55°C to 150°C. It comes in a 2-8H1A package and is suitable for through-hole mounting. The complementary transistor to the 2SC3419 is the 2SA1356.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC3419 is 40 V.
The maximum collector current (IC) for the 2SC3419 is 800 mA.
The typical collector-emitter saturation voltage (VCE(sat)) for the 2SC3419 is 0.25 V when operating at 500 mA collector current and 50 mA base current.
The collector power dissipation (PC) for the 2SC3419 is rated at 5 W when the case temperature is 25°C.
The transition frequency (fT) for the 2SC3419 is typically 50 MHz and can reach up to 100 MHz when operating at 2 V collector-emitter voltage and 0.5 A collector current.