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2SC3357-T1-A NPN RF bipolar transistor from Renesas with 12V collector-emitter breakdown voltage, 100mA collector current, 6.5GHz transition frequency, and 10dB typical gain.
Mfr Part #:

2SC3357-T1-A

Available from 2 distributors
Mfr Name: Renesas
Renesas
NPN RF bipolar transistor from Renesas with 12V collector-emitter breakdown voltage, 100mA collector current, 6.5GHz transition frequency, and 10dB typical gain.
✓ Total Stock: 136,143 pcs

2SC3357-T1-A Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
129,143 pcs
On Request
129143 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
7,000 pcs
On Request
7000 pcs On Request 1 On Request On Request 16+ On Request On Request
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2SC3357-T1-A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Voltage
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2SC3357-T1-A Description

Short technical summary and product information.

The 2SC3357-T1-A is an NPN RF bipolar junction transistor manufactured by Renesas. It is designed for ultra-high frequency band applications up to 6.5GHz. The transistor features a maximum collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. Power dissipation is rated at 1.2W. Typical gain is 10dB with a noise figure of 1.8dB at 1GHz. Minimum DC current gain (hFE) is 50 at 20mA collector current and 10V collector-emitter voltage. The device is housed in a TO-243AA package with a SOT-89 supplier device package and is surface mount compatible. The junction operating temperature is rated up to 150°C.

2SC3357-T1-A Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: 2SC3357-T1-A NPN RF Bipolar Transistor
Subcategory: RF Transistor

2SC3357-T1-A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC3357-T1-A Features

  • NPN RF bipolar junction transistor.
  • 12V collector-emitter breakdown voltage.
  • 6.5GHz transition frequency.
  • 10dB typical gain at 1GHz.
  • Surface mount SOT-89 package.

2SC3357-T1-A Applications

  • Ultra-high frequency RF amplifiers.
  • RF oscillator circuits.
  • Wireless communication modules.

2SC3357-T1-A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SC3357-T1-A?

The maximum collector-emitter breakdown voltage is 12V.

What is the transition frequency of this transistor?

The transition frequency (ft) is 6.5GHz.

What package does the 2SC3357-T1-A come in?

It comes in a TO-243AA package with a SOT-89 supplier device package, surface mount.

What is the operating junction temperature?

The maximum junction operating temperature is 150°C.

Is the 2SC3357-T1-A RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

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