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988 pcs
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988 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC3356-T1B-A from NEC is an NPN RF bipolar transistor designed for small signal applications. It boasts a high gain bandwidth product (fT) of 7 GHz and an operating frequency of 1 GHz, making it suitable for RF circuits.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 12V, a maximum emitter-base voltage (VEBO) of 3V, and a continuous collector current (IC) of 0.1A. The power dissipation is rated at 200mW. The transistor operates within a temperature range of -65°C to +150°C.
This component is supplied in a compact SOT-23-3 surface-mount package, suitable for automated assembly processes. It is presented on a reel for tape and reel packaging. The RoHS status is reported as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC3356-T1B-A is 12V.
The gain bandwidth product (fT) of the 2SC3356-T1B-A is 7 GHz.
The operating temperature range for the 2SC3356-T1B-A is -65°C to +150°C.
The 2SC3356-T1B-A is supplied in a SOT-23-3 package.
The RoHS status for the 2SC3356-T1B-A is RoHS3 Compliant.