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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC3334 is a Silicon NPN Triple Diffused Transistor designed for various electronic applications. This component operates with a maximum collector current of 50mA and can withstand a maximum collector emitter voltage of 250V.
Key electrical characteristics include a maximum collector emitter saturation voltage of 1.5V and a maximum power dissipation of 900mW. The transistor is rated for a maximum operating temperature of 150°C, ensuring reliability in demanding environments.
With 3 terminals, the 2SC3334 is suitable for through-hole mounting. Its specifications make it a viable option for general-purpose amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SC3334 transistor is 50mA.
The maximum collector emitter voltage of the 2SC3334 is 250V.
The maximum power dissipation for the 2SC3334 is 900mW.
The maximum operating temperature for the 2SC3334 transistor is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SC3334 is 1 Unlimited.
