2SC3332S 2SC3332S is an NPN bipolar transistor from On Semiconductor with a maximum collector-emitter voltage of 160V and a continuous collector current of 0.7A.
Mfr Part #:

2SC3332S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
2SC3332S is an NPN bipolar transistor from On Semiconductor with a maximum collector-emitter voltage of 160V and a continuous collector current of 0.7A.
Total Stock: 4,512 pcs
$ Price Range: $0.25

2SC3332S Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,512 pcs
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2SC3332S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-to-Emitter Saturation Voltage
Collector Current (Pulse)
Collector Cutoff Current
Collector-to-Base Breakdown Voltage
Collector-to-Base Voltage
Collector-to-Emitter Breakdown Voltage
Current
DC Current Gain (Minimum @ Vce=5 V, Ic=10 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Emitter-to-Base Breakdown Voltage
Emitter-to-Base Voltage
Fall Time
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Output Capacitance
Power
Standard Package Quantity
Storage Temperature
Storage Time
Supplier Device Package
Tape & Reel
Transistor Type
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage

2SC3332S Description

Short technical summary and product information.

The 2SC3332S is a high-voltage NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter voltage rating of up to 160V and a continuous collector current of 700mA.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 140 at 100mA and a typical gain-bandwidth product of 120MHz. The device features a low collector-emitter saturation voltage of 400mV maximum at 250mA, contributing to efficient switching performance.

 

The transistor is housed in a through-hole TO-92 package (TO-226-3, TO-226AA), making it suitable for manual assembly and prototyping. It is supplied in bulk packaging with a standard quantity of 500 pieces per bag.

2SC3332S Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SC3332S NPN Bipolar Transistor
Subcategory: Single NPN

2SC3332S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SC3332S Estimated Pricing

Qty Low High
1,212+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC3332S Features

  • NPN bipolar transistor with 160V VCEO rating.
  • Continuous collector current of 0.7A.
  • Low collector-emitter saturation voltage of 0.4V.
  • High DC current gain of 140 minimum at 100mA.
  • Through-hole TO-92 package for easy assembly.

2SC3332S Applications

  • General purpose switching and amplification.
  • High-voltage driver circuits.
  • Audio amplifier pre-driver stages.
  • Power management and load switching.

2SC3332S FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SC3332S?

The maximum collector-emitter voltage (VCEO) is 160V.

What is the maximum collector current rating?

The maximum continuous collector current is 0.7A, with a pulse rating of 1.5A.

What package type is the 2SC3332S available in?

It is available in a through-hole TO-92 package (TO-226-3, TO-226AA).

What is the operating junction temperature range?

The maximum junction temperature is 150°C, and the storage temperature range is -55 to +150°C.

Is the 2SC3332S RoHS compliant?

The datasheet indicates the part is Pb Free, and it is listed as RoHS3 Compliant.

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