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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,239 pcs
|
2239 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base Current (IB) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Output Capacitance (COB) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) Classification (Grade G) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Industrial Grade | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Package Style | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| nf (Typical @ Vce=6 V, Ic=0.1 mA, f=1 kHz, Rg=10 kΩ) | |
| nf (Typical @ Vce=6 V, Ic=0.1 mA, f=100 Hz, Rg=10 kΩ) |
The 2SC3324GRTE85LF is an NPN bipolar junction transistor manufactured by Toshiba. It features a collector-emitter voltage (VCEO) of 120V, a continuous collector current (IC) of 100mA, and a power dissipation of 150mW. The transistor offers a DC current gain (hFE) range of 200-400 for the G grade, with a transition frequency of 100MHz.
This transistor is designed for general purpose amplification and low-power switching applications. It has a low collector-emitter saturation voltage of 300mV at 10mA collector current, ensuring efficient operation. The device also exhibits low noise figure characteristics: 6dB at 100Hz and 3dB at 1kHz, making it suitable for audio frequency applications.
The 2SC3324GRTE85LF is supplied in a surface mount SOT-23 package (also known as TO-236-3 or SC-59), which is suitable for automated assembly. The operating junction temperature range is up to 125°C, with a storage temperature range of -55°C to 125°C.
120V.
100mA.
150mW.
200-400.
100MHz.
TO-236-3, SC-59, SOT-23-3 surface mount package.
Maximum junction temperature is 125°C, storage temperature range is -55 to 125°C.