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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Toshiba 2SC3324-GRTE85L,F is a small signal NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact SOT-346 surface-mount package, making it ideal for space-constrained designs.
The transistor offers a maximum collector-emitter voltage (Vceo) of 120V and a maximum DC collector current (Idc) of 100mA. It has a minimum DC current gain (hFE) of 200 and a maximum transition frequency (ft) of 100MHz. The maximum power dissipation is rated at 150mW, and it can operate at temperatures up to 125°C.
With its NPN polarity and single transistor configuration, the 2SC3324-GRTE85L,F is a versatile component for signal amplification and switching circuits. Its Japanese origin suggests adherence to quality manufacturing standards.
Key electrical characteristics include a maximum collector-base voltage (VCBO) of 120V and a maximum emitter-base voltage (VEBO) of 120V. The dimensions of the SOT-346 package are 2.9mm in length and 1.26mm in height, with a total of 3 pins.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 120 V.
SOT-346 surface mount package.
125 °C.
100 mA.
NPN.
Minimum 200.
100 MHz.