2SC3324-BL

The Toshiba 2SC3324-BL is a silicon NPN epitaxial planar type transistor utilizing the PCT process. It is specifically designed for audio frequency low noise amplifier applications. Key features include a high collector-emitter voltage (VCEO) of 120V and excellent hFE linearity, with the ratio of hFE at 0.1mA to hFE at 2mA being 0.95 typically. The transistor boasts a high DC current gain (hFE) ranging from 200 to 700 and a low noise figure, with NF(2) typically 0.2dB at 1kHz.

This device is complementary to the 2SA1312. It comes in a small TO-236MOD (SC-59) package, suitable for surface mount applications. The maximum collector current is 100mA, and power dissipation is rated at 150mW. The junction temperature limit is 125°C, with a storage temperature range of -55°C to 125°C.

Electrical characteristics include a collector cut-off current (ICBO) of 0.1mA maximum at 120V, and an emitter cut-off current (IEBO) of 0.1mA maximum at 5V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 0.3V at 10mA collector current and 1mA base current. The transition frequency (fT) is typically 100MHz at 6V and 1mA. Collector output capacitance (Cob) is typically 4pF at 10V, 0 emitter current, and 1MHz.

The 2SC3324-BL is intended for general electronic applications such as computers, personal equipment, office equipment, measuring equipment, industrial robotics, and domestic appliances. It is not warranted for usage in equipment requiring extraordinarily high quality and/or reliability where malfunction or failure could cause loss of human life or bodily injury.