| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC3307 is a silicon NPN triple diffused type bipolar junction transistor (BJT). It is designed for power applications, offering a high collector-emitter voltage rating of 800V and a continuous collector current of 10A.
This transistor is housed in a TO-3PL package, suitable for through-hole mounting. Its electrical characteristics include a collector-base voltage of 900V and an emitter-base voltage of 7V. With a power dissipation capability of 150W, it is well-suited for various power switching and amplification circuits.
The 2SC3307 operates at frequencies below 1 MHz and is classified as a bipolar power component. Its robust construction and specifications make it a reliable choice for industrial automation and process automation applications where stable power handling is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 800V.
The continuous collector current is 10A.
The 2SC3307 is supplied in a TO-3PL package.
The power dissipation is 150W.
The mounting type is Through Hole.