| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,638 pcs
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2638 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba 2SC3265-Y is a silicon NPN transistor suitable for switching applications. It operates with a maximum collector emitter voltage (VCEO) of 400mV and can handle a maximum collector current (IC) of 800mA.
This transistor offers a minimum DC current gain (hFE) of 160 at 100mA and 1V. It has a maximum power dissipation of 200mW and an operating temperature range up to 150°C.
The 2SC3265-Y is supplied in a TO-236-3, SC-59, SOT-23-3 surface mount package, typically in Cut Tape (CT) packaging. Its terminal form is Gull Wing, and it has 3 terminations.
This component is classified under Transistors - Bipolar (BJT) - Single, Pre-Biased. It is available for RFQ, with pricing and lead times provided upon request.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage (VCEO) for the 2SC3265-Y is 400mV.
The maximum collector current (IC) for the 2SC3265-Y is 800mA.
The minimum DC current gain (hFE) for the 2SC3265-Y is 160 at 100mA collector current and 1V collector-emitter voltage.
The 2SC3265-Y has an operating temperature range up to 150°C.
The 2SC3265-Y is supplied in a TO-236-3, SC-59, SOT-23-3 surface mount package.
The RoHS status for the 2SC3265-Y is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SC3265-Y is 1 Unlimited.