| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SC3056 from Fujitsu Semiconductor is an NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is categorized under Transistors - Bipolar (BJT) - Single, Pre-Biased.
Key electrical characteristics include a maximum collector-emitter breakdown voltage (Vceo) of 450V, a maximum continuous collector current (Ic) of 6A, and a maximum power dissipation (Pmax) of 50W. The transistor also has a transition frequency (Ft) of 30MHz.
This component is designed for applications requiring moderate power handling and voltage capabilities. Its specifications suggest suitability for power supply circuits, switching applications, and general-purpose amplification where these parameters are critical.
Information regarding package type, mounting, and specific lead configurations is not detailed here but is crucial for integration into a circuit design. The component is listed with a standard package quantity of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vceo) for the 2SC3056 is 450V.
The maximum continuous collector current (Ic) for the 2SC3056 is 6A.
The maximum power dissipation (Pmax) for the 2SC3056 is 50W.
The transition frequency (Ft) of the 2SC3056 is 30MHz.