| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC2979 is a Silicon NPN Triple Diffused transistor manufactured by TSL, designed for high voltage, high speed, and high power switching applications. It comes in a TO-220AB package.
Key electrical specifications include a collector-to-emitter voltage (VCEO) of 800V, a continuous collector current (IC) of 3A, and a peak collector current (IC(peak)) of 6A. The maximum collector power dissipation (PC) is rated at 40W at a case temperature of 25°C.
Thermal characteristics include a maximum junction temperature of 150°C and a storage temperature range of -55°C to +150°C. The transistor exhibits a minimum DC current transfer ratio (hFE) of 15 at IC = 0.3A and 7 at IC = 1.5A, both measured at VCE = 5V.
Switching characteristics are also specified, with a turn-on time of 1.0ms, storage time of 3.0ms, and fall time of 1.0ms under specific test conditions. The TO-220AB package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC2979 is 800V.
The maximum continuous collector current (IC) for the 2SC2979 is 3A.
The maximum power dissipation (PC) for the 2SC2979 is 40W at a case temperature of 25°C.
The 2SC2979 transistor is supplied in a TO-220AB package.
The storage temperature range for the 2SC2979 is -55°C to +150°C.