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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SC2922 is a silicon NPN epitaxial planar transistor from Sanken, specifically designed for audio amplifier output stages and general purpose applications. It utilizes LAPT (High frequency multi emitter transistor) technology for improved performance. The transistor is complementary to the 2SA1216 PNP type.
Key electrical specifications include a maximum collector-base voltage (VCBO) of 180V, collector-emitter voltage (VCEO) of 180V, emitter-base voltage (VEBO) of 5V, a maximum collector current (IC) of 17A, and a base current (IB) of 5A. Power dissipation is rated at 200W at a case temperature of 25°C. The DC current gain (hFE) ranges from 30 to 180 at VCE=4V and IC=8A. The typical transition frequency is 50MHz.
The transistor is housed in an MT-200 through-hole package, suitable for mounting on a heatsink. The operating junction temperature range is up to 150°C, with a storage temperature range of -55°C to +150°C. The device is RoHS3 compliant.
The maximum collector-emitter voltage (VCEO) is 180V.
The 2SC2922 is available in the MT-200 through-hole package.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
Yes, the 2SC2922 is RoHS3 compliant as verified by the manufacturer.
The maximum collector current (IC) is 17A.
The DC current gain (hFE) ranges from 30 to 180 at VCE=4V and IC=8A.
The complementary PNP transistor is the 2SA1216.