2SC2921 2SC2921 is a silicon NPN epitaxial planar transistor designed for audio amplifier output stages. It features a collector-emitter breakdown voltage of 160V, collector current of 15A, and power dissipation of 150W.
Mfr Part #:

2SC2921

Available from 1 distributors
Mfr Name: Sanken
Sanken
2SC2921 is a silicon NPN epitaxial planar transistor designed for audio amplifier output stages. It features a collector-emitter breakdown voltage of 160V, collector current of 15A, and power dissipation of 150W.
Total Stock: 161 pcs

2SC2921 Available from 1 distributor

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2SC2921 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Base Current (IB)
Collector-Emitter Breakdown Voltage (Min)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) Range
Emitter-Base Voltage (VEBO)
Frequency
Junction Temperature (TJ)
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Package Weight
Power
Storage Temperature Range (TSTG)
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

2SC2921 Description

Short technical summary and product information.

The 2SC2921 is a silicon NPN epitaxial planar transistor from Sanken, designed for audio amplifier output stages and general purpose applications. It features a collector-emitter breakdown voltage (VCEO) of 160V minimum, a collector current (IC) rating of 15A maximum, and a power dissipation (PC) of 150W at a case temperature of 25°C. The transistor offers a DC current gain (hFE) ranging from 50 to 180 at 5A/4V, with specific gain ranks available. The typical transition frequency (fT) is 60MHz, and the collector-emitter saturation voltage (VCE(sat)) is 2V maximum at 5A/0.5A. The device is housed in a 3-ESIP through-hole package with the MT-200 supplier device package, weighing 18.4g. It is RoHS3 compliant and has a complementary PNP type, 2SA1215. The 2SC2921 utilizes LAPT (High frequency multi emitter) technology for improved performance.

2SC2921 Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: 2SC2921 Silicon NPN Epitaxial Planar Transistor
Subcategory: Single

2SC2921 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC2921 Features

  • NPN epitaxial planar transistor design.
  • 160V collector-emitter breakdown voltage.
  • 15A collector current capability.
  • 150W power dissipation at 25°C case.
  • MT-200 through-hole package.

2SC2921 Applications

  • Suitable for audio amplifier output stages.
  • Used in general purpose switching circuits.
  • Pairs with 2SA1215 PNP transistor.
  • Ideal for wide ASO requirements.
  • High frequency multi emitter applications.

2SC2921 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2SC2921?

The minimum collector-emitter breakdown voltage (VCEO) is 160V at IC=25mA.

What package does the 2SC2921 come in?

The 2SC2921 is available in a 3-ESIP through-hole package with MT-200 as the supplier device package.

What is the maximum operating temperature for the 2SC2921?

The maximum junction temperature (Tj) is 150°C.

Is the 2SC2921 RoHS compliant?

Yes, the 2SC2921 is RoHS3 compliant as stated on the manufacturer page.

What is the DC current gain (hFE) of the 2SC2921?

The DC current gain (hFE) ranges from 50 to 180 at VCE=4V, IC=5A, with specific ranks: O (50-100), P (70-140), Y (90-180).

What is the collector current rating of the 2SC2921?

The maximum collector current (IC) is 15A.

What is the transition frequency of the 2SC2921?

The typical transition frequency (fT) is 60MHz at VCE=12V, IE=-2A.

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