| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90,400 pcs
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90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC2859-YF is an NPN Epitaxial Transistor utilizing a PCT process, suitable for a range of applications including audio frequency amplification, driver stages, and switching circuits. It is complementary to the 2SA1182.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 30V and a collector current (IC) of up to 500mA. The device exhibits a transition frequency (fT) of 300MHz at 6V and 20mA, and a DC current gain (hFE) ranging from 70 to 400 under specific test conditions (VCE=1V, IC=100mA).
The transistor is housed in a TO-236MOD (SC-59) package, designed for surface mounting. Absolute maximum ratings include a collector-base voltage (VCBO) of 35V and a junction temperature of 125°C. Careful consideration of operating conditions is advised to ensure product reliability, as continuous operation under heavy loads may affect performance.
This component is well-suited for designs requiring efficient amplification and switching capabilities within its specified voltage and current limits. Its complementary nature to the 2SA1182 may simplify circuit design in certain push-pull configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 30V, and the maximum collector-base voltage is 35V.
It is housed in a TO-236MOD surface-mount package.
The junction temperature can reach up to 125°C, and the storage temperature range is -55°C to 125°C.
The DC current gain (hFE) is 70 to 400 at VCE=1V, IC=100mA, and a minimum of 25 at VCE=6V, IC=400mA.
The transition frequency is typically 300MHz at VCE=6V, IC=20mA.
The complementary PNP transistor is the 2SA1182.
The maximum collector power dissipation is 150mW.