| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The 2SC2814-4-TB-E from ON Semiconductor is an NPN bipolar junction transistor (BJT) specifically designed for RF applications. This component offers a maximum collector-emitter voltage of 20V and a maximum collector current of 30mA. It has a typical transition frequency (fT) of 320MHz, making it suitable for various high-frequency circuits.
The transistor is housed in a compact TO-236-3 surface-mount package, facilitating integration into space-constrained designs. Its power dissipation is rated at 150mW. The gain (hFE) is a minimum of 90 at 1mA and 6V, and typically 25 at 100MHz.
This RF transistor is ideal for use in applications requiring amplification or switching at radio frequencies. The surface-mount package allows for automated assembly processes, contributing to efficient manufacturing.
Key electrical characteristics include a typical gain bandwidth product of 3dB at 100MHz. The component is supplied in a tape and reel format for high-volume production.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 20V.
The maximum collector current is 30mA.
The power dissipation is 150mW.
The typical transition frequency is 320MHz.
The 2SC2814-4-TB-E is supplied in a TO-236-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.