2SC2814-4-TB-E The ON Semiconductor 2SC2814-4-TB-E is an NPN RF transistor designed for RF applications. It features a 20V collector-emitter voltage and a 30mA collector current.
Mfr Part #:

2SC2814-4-TB-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor 2SC2814-4-TB-E is an NPN RF transistor designed for RF applications. It features a 20V collector-emitter voltage and a 30mA collector current.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

2SC2814-4-TB-E Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

2SC2814-4-TB-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Tape & Reel

2SC2814-4-TB-E Description

Short technical summary and product information.

The 2SC2814-4-TB-E from ON Semiconductor is an NPN bipolar junction transistor (BJT) specifically designed for RF applications. This component offers a maximum collector-emitter voltage of 20V and a maximum collector current of 30mA. It has a typical transition frequency (fT) of 320MHz, making it suitable for various high-frequency circuits.

 

The transistor is housed in a compact TO-236-3 surface-mount package, facilitating integration into space-constrained designs. Its power dissipation is rated at 150mW. The gain (hFE) is a minimum of 90 at 1mA and 6V, and typically 25 at 100MHz.

 

This RF transistor is ideal for use in applications requiring amplification or switching at radio frequencies. The surface-mount package allows for automated assembly processes, contributing to efficient manufacturing.

 

Key electrical characteristics include a typical gain bandwidth product of 3dB at 100MHz. The component is supplied in a tape and reel format for high-volume production.

2SC2814-4-TB-E Quick Information

Product Type: NPN RF Transistor
Series: 2SC2814
Canonical Name: 2SC2814-4-TB-E NPN RF Transistor
Subcategory: RF Transistor

2SC2814-4-TB-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC2814-4-TB-E Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC2814-4-TB-E Features

  • NPN RF BJT for high-frequency applications.
  • 20V collector-emitter voltage rating.
  • 30mA maximum collector current.
  • 320MHz typical transition frequency.
  • TO-236-3 surface-mount package.

2SC2814-4-TB-E Applications

  • Used in RF signal amplification circuits.
  • Ideal for low-power RF oscillator designs.
  • Suitable for VHF amplifier applications.
  • Used in wireless communication RF front ends.

2SC2814-4-TB-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2SC2814-4-TB-E?

The maximum collector-emitter voltage is 20V.

What is the maximum collector current of the 2SC2814-4-TB-E?

The maximum collector current is 30mA.

What is the power dissipation rating for the 2SC2814-4-TB-E?

The power dissipation is 150mW.

What is the transition frequency (fT) of the 2SC2814-4-TB-E?

The typical transition frequency is 320MHz.

What package type is the 2SC2814-4-TB-E supplied in?

The 2SC2814-4-TB-E is supplied in a TO-236-3 package.

What is the RoHS status of the 2SC2814-4-TB-E?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 2SC2814-4-TB-E?

The Moisture Sensitivity Level is 1 Unlimited.

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