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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC2769 from Fe is an NPN silicon power transistor designed for high-speed switching applications. It features a high collector-emitter breakdown voltage (VCEO) of 200V and can handle a collector current (IC) of up to 10A. This transistor is built for high reliability and offers a high switching speed, making it suitable for various power electronics designs.
The 2SC2769 is housed in a TO-3P package, which is a common type for power transistors, facilitating through-hole mounting. Its robust construction and electrical characteristics make it a viable option for applications such as switching regulators, DC-DC converters, solid-state relays, and general-purpose power amplifiers.
Key electrical parameters include a minimum VCEO of 200V and a maximum IC of 10A. While specific details on saturation voltage, base current, and power dissipation are not detailed here, the transistor's primary function is efficient switching in power circuits.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) of the 2SC2769 is a minimum of 200V.
The 2SC2769 transistor can handle a maximum collector current (IC) of 10A.
The 2SC2769 transistor is supplied in a TO-3P package.
The 2SC2769 transistor is used in switching regulators, DC-DC converters, solid-state relays, and general-purpose power amplifiers.