| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Junction Temperature | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature |
The Toshiba 2SC2712-YTE85L,F is an NPN epitaxial silicon transistor suitable for audio frequency general purpose amplifier applications. It features a high collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 150mA.
This transistor boasts excellent hFE linearity and a high DC current gain (hFE) ranging from 70 to 700. Its transition frequency (fT) is 80 MHz at 10V and 1mA, making it suitable for various amplification tasks. The noise figure (NF) is typically 1dB.
Packaged in a compact TO-236MOD (SC-59) surface mount case, the 2SC2712-YTE85L,F is designed for ease of integration into electronic circuits. Its complementary type is the 2SA1162.
Absolute maximum ratings include a collector-base voltage (VCBO) of 60V, emitter-base voltage (VEBO) of 5V, base current (IB) of 30mA, and collector power dissipation (PC) of 150mW. The junction temperature (Tj) is rated up to 125°C, with a storage temperature range of -55°C to 125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) of the 2SC2712-YTE85L,F is 50V.
The maximum collector current (IC) for the 2SC2712-YTE85L,F is 150mA.
The maximum collector power dissipation (PC) of the 2SC2712-YTE85L,F is 150mW.
The maximum junction temperature (Tj) of the 2SC2712-YTE85L,F is 125°C.
The storage temperature range for the 2SC2712-YTE85L,F is -55°C to 125°C.
The 2SC2712-YTE85L,F is supplied in a TO-236MOD package.
The mounting type for the 2SC2712-YTE85L,F is Surface Mount.