| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC2712-YTE85,LF is an NPN epitaxial silicon transistor suitable for audio frequency general purpose amplifier applications. This component features a high collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 150mA.
Key electrical characteristics include a wide DC current gain (hFE) range from 70 to 700, excellent hFE linearity, and low noise figure (NF) typically at 1dB. The transistor operates with a transition frequency (fT) of 80MHz and has a collector output capacitance (Cob) of up to 3.5pF.
Packaged in a compact TO-236MOD (SC-59) surface-mount case, the 2SC2712-YTE85,LF is designed for ease of integration into electronic circuits. Its complementary type is the 2SA1162. The maximum power dissipation is 150mW, with a junction temperature limit of 125°C and storage temperature range of -55°C to 125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
The maximum collector current (IC) is 150mA.
The package type is TO-236MOD.
The maximum junction temperature is 125°C.
The DC current gain (hFE) ranges from 70 to 700, with a Y classification of 120 to 240.
The typical transition frequency (fT) is 80MHz.