| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC2681 from NEC is a SILICON POWER TRANSISTOR belonging to the Bipolar Junction Transistor (BJT) family. It is designed for applications requiring robust power handling capabilities.
Key electrical specifications include a maximum collector current of 10A and a collector-emitter voltage rating of 115V. The device also has a maximum collector emitter saturation voltage of 1.5V. For power handling, it offers a maximum power dissipation of 100W, with a typical power dissipation of 2W.
The operating temperature range extends up to 150°C, making it suitable for environments with elevated thermal conditions. The transistor has 3 terminals and is typically used in through-hole mounting configurations, though specific package details are not provided.
This component is part of the discrete semiconductor products category, specifically within single bipolar junction transistors. Its specifications suggest suitability for power switching and amplification circuits where reliability and significant current handling are necessary.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SC2681 is 10A.
The collector-emitter voltage for the 2SC2681 is 115V.
The maximum power dissipation for the 2SC2681 is 100W.
The maximum operating temperature for the 2SC2681 is 150°C.
