| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
The 2SC2655Y from Toshiba is an NPN bipolar junction transistor (BJT) housed in a TO-92MOD package. This component is suitable for a wide range of electronic circuits requiring amplification or switching capabilities.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 50V, a maximum collector-base voltage (VCB) of 50V, and a maximum emitter-base voltage (VEBO) of 5V. The continuous collector current (Ic) is rated at 2A, with a collector power dissipation of 0.9W. The DC current gain (hFE) ranges from 120 to 240, and it has a minimum transition frequency (fT) of 40MHz.
This transistor operates within a junction temperature range of -55 to +150°C. Its complementary PNP type is the 2SA1020Y. Several SMD versions and replacements are available, indicating its common use in surface-mount designs as well.
The 2SC2655Y is a reliable choice for engineers designing power supply circuits, audio amplifiers, and general switching applications where its specifications meet the design requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The continuous collector current is 2A.
The DC current gain (hFE) ranges from 120 to 240.
The operating junction temperature range is -55 to +150°C.
The 2SC2655Y is supplied in a TO-92MOD package.