LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC2625 from Fe is a triple diffused planer type power transistor engineered for high voltage and high speed switching applications. It is suitable for use in switching regulators, ultrasonic generators, high frequency inverters, and general purpose power amplifiers.
Key electrical characteristics include a maximum collector-emitter voltage (V_CEO) of 400V and a maximum collector current (I_C) of 7A. The device offers a maximum power dissipation (P_C) of 3W and a junction-to-case thermal resistance of 1.55°C/W. The operating junction temperature ranges from -55°C to +150°C.
This transistor comes in a TO-3P package, designed for through-hole mounting. Its high reliability and performance make it a suitable component for demanding power electronics designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V_CEO) for the 2SC2625 is 400V.
The maximum continuous collector current (I_C) for the 2SC2625 is 7A.
The maximum power dissipation (P_C) for the 2SC2625 is 3W.
The operating junction temperature range for the 2SC2625 is -55°C to +150°C.
The 2SC2625 is available in a TO-3P package.
The minimum DC current gain (hFE) for the 2SC2625 is 10 when tested at IC = 4A and VCE = 5V.
The typical switching times for the 2SC2625 are 1µs for turn-on (ton), 2µs for storage (tstg), and 1µs for turn-off (tf), tested at IC = 7.5A and IB1 = -IB2 = 1.5A.
