| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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112 pcs
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112 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SC2611 is a Silicon NPN Triple Diffused Transistor suitable for high voltage amplifier and TV video output applications. It features a maximum collector-emitter voltage of 300V and a maximum collector current of 100mA.
Key electrical characteristics include a DC current transfer ratio (hFE) ranging from 30 to 200, a collector-emitter saturation voltage (VCE(sat)) of up to 1.5V, and a gain bandwidth product (fT) of 80MHz. The collector output capacitance (Cob) is a maximum of 4.0pF.
This transistor is housed in a TO-126 MOD package, designed for through-hole mounting. It has a maximum power dissipation of 1.25W and can operate within a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V CEO) for the 2SC2611 is 300V.
The maximum collector current (I C) for the 2SC2611 is 100mA.
The DC current transfer ratio (hFE) for the 2SC2611 ranges from 30 to 200.
The 2SC2611 transistor comes in a TO-126 MOD package.
The maximum power dissipation (P C) for the 2SC2611 is 1.25W.
The storage temperature range for the 2SC2611 is -55°C to +150°C.