| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The 2SC2607 is a silicon PNP power transistor manufactured by EIC SEMICONDUCTOR INC. It is designed for general purpose applications, including power switching and amplifier circuits. This transistor offers a collector-emitter breakdown voltage of -200V.
The 2SC2607 is packaged in a TO-3 case, suitable for through-hole mounting. Its complement is the 2SA1116. The device is specified for general purpose applications.
Key electrical characteristics include a collector-emitter breakdown voltage of -200V. While specific power dissipation and current gain values are not detailed in the available snippets, the part is noted for high power dissipation capabilities. It is intended for use in various electronic circuits requiring a robust PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage of the 2SC2607 is -200V.
The 2SC2607 is available in a TO-3 package.
The complement to the 2SC2607 transistor is the 2SA1116.