| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22 pcs
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22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC2562 from Toshiba is a silicon power transistor designed for electronic circuits requiring robust power handling capabilities. It comes in a standard TO-220AB package, which is widely used for through-hole mounting and provides good thermal dissipation.
Key electrical specifications include a collector emitter voltage (Vce) of 50V. This transistor is classified under Bipolar Junction Transistors (BJTs) and is suitable for applications where reliable power switching or amplification is needed.
The TO-220AB package facilitates easy integration into printed circuit boards and is compatible with common heatsinks, making it a practical choice for designs where thermal management is a consideration. Its construction as a silicon power transistor suggests suitability for moderate to high power applications within its voltage and current ratings.
This component belongs to the category of discrete semiconductor products, specifically within the single, pre-biased bipolar junction transistors. Its design is focused on delivering performance and reliability in power-related electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector emitter voltage for the 2SC2562 transistor is 50V.
The 2SC2562 transistor is supplied in a TO-220AB package.