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34 pcs
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34 pcs | On Request | 3 | On Request | On Request | On Request | On Request | On Request |
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The Fujitsu Semiconductor 2SC2523 is an NPN power transistor designed for high-frequency power amplification, audio power amplification, switching regulators, and DC-DC converters. It boasts a high collector-emitter breakdown voltage of 160V and a continuous collector current rating of 12A.
Key electrical characteristics include a collector-emitter saturation voltage of 1.8V and a DC current gain (hFE) ranging from 60 to 200 at 1A. The transistor also features a current-gain-bandwidth product of 80MHz and fast switching times with a typical fall time of 0.2μs and rise time of 0.3μs.
With a maximum power dissipation of 120W at 25℃ and a junction temperature of 150℃, the 2SC2523 is suitable for demanding applications. Its complement is the 2SA1073 transistor.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (V(BR)CEO) for the 2SC2523 transistor is 160V.
The continuous collector current (IC) rating for the 2SC2523 transistor is 12A.
The maximum power dissipation (PC) for the 2SC2523 transistor at 25℃ is 120W.
The typical current-gain-bandwidth product (fT) for the 2SC2523 transistor is 80MHz.
The typical switching times for the 2SC2523 transistor are a rise time (tr) of 0.3μs and a fall time (tf) of 0.2μs.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SC2523 transistor is 1 Unlimited.
