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2SC2461A The Toshiba 2SC2461A is an NPN Power BJT designed for various electronic applications. It offers a high collector current capability and significant power dissipation.
Mfr Part #:

2SC2461A

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SC2461A is an NPN Power BJT designed for various electronic applications. It offers a high collector current capability and significant power dissipation.
✓ Total Stock: 18 pcs
$ Price Range: $0.99

2SC2461A Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Partservice ✓
Non-Authorised Inventory information
16 pcs
On Request
16 pcs On Request 1 On Request On Request On Request On Request On Request
Chanetech ✓
Non-Authorised Inventory information
2 pcs
On Request
2 pcs On Request 1 On Request On Request On Request On Request On Request
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2SC2461A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Package / Case
Power Dissipation
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2SC2461A Description

Short technical summary and product information.

The Toshiba 2SC2461A is a Silicon NPN Power Bipolar Junction Transistor (BJT) housed in a TO-3 package. This component is rated for a maximum collector current of 15A and features a breakdown voltage of 160V for both collector-base and collector-emitter configurations.

 

With an absolute maximum power dissipation of 150W, the 2SC2461A is suitable for applications requiring robust power handling. The transistor exhibits a minimum static current gain (hFE) of 120 and a maximum current gain of 240. Its transition frequency (fT) is a minimum of 60MHz.

 

This BJT is specified with typical test conditions of 1.0A collector current at 5.0V collector-emitter voltage. The TO-3 package is known for its thermal performance and ease of mounting, making it suitable for power applications.

2SC2461A Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: Toshiba 2SC2461A Si NPN Power BJT
Subcategory: Bipolar Junction Transistor (BJT)

2SC2461A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC2461A Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC2461A Features

  • NPN Silicon Power BJT
  • 15A continuous collector current
  • 160V collector-emitter breakdown voltage
  • 150W maximum power dissipation
  • TO-3 package

2SC2461A Applications

  • Used in high-current switching circuits
  • Suitable for RF amplification
  • Ideal for power amplifier applications
  • Applicable in motor control modules

2SC2461A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the 2SC2461A?

The maximum collector current (IC Abs.) is 15A.

What is the breakdown voltage of the 2SC2461A?

The collector-emitter breakdown voltage (V(BR)CEO) is 160V, and the collector-base breakdown voltage (V(BR)CBO) is also 160V.

What is the maximum power dissipation for the 2SC2461A?

The absolute maximum power dissipation is 150W.

What is the current gain (hFE) range for the 2SC2461A?

The minimum static current gain (hFE Min.) is 120, and the maximum current gain (hFE Max.) is 240.

What package type is the 2SC2461A supplied in?

The 2SC2461A is supplied in a TO-3 package.

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