| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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23 pcs
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23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC2298 is a silicon NPN bipolar junction transistor (BJT) manufactured by Toshiba. It is designed for use in electronic circuits requiring amplification or switching capabilities.
Key electrical specifications include a maximum collector current of 1A and a maximum collector-emitter voltage of 30V. The device can dissipate up to 8W of power and operates at a maximum temperature of 150°C. The transistor has 3 terminals and is suitable for through-hole mounting.
This component is part of the single, pre-biased transistor category, indicating its suitability for specific circuit configurations where biasing is integrated. Its specifications make it a versatile component for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SC2298 transistor is 1A.
The maximum collector-emitter voltage for the 2SC2298 is 30V.
The maximum power dissipation for the 2SC2298 is 8W.
The maximum operating temperature for the 2SC2298 transistor is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.