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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Sanyo Denki 2SC2078 is an NPN Epitaxial Planar Silicon Transistor specifically designed for 27MHz RF Power Amplifier applications. It features a maximum Collector-Emitter Voltage (Vce) of 80V and a continuous Collector Current (Ic) of 3A, with a pulse capability of 5A.
Key electrical characteristics include a minimum Gain Bandwidth Product (fT) of 100MHz at Vce=10V and Ic=0.1A, and an Output Capacitance (Cob) of 540pF maximum at Vce=10V and f=1MHz. The transistor also exhibits a minimum DC Current Gain (hFE) of 25 at Vce=5V and Ic=0.5A, with a maximum value of 200.
This transistor is housed in a TO-220AB package, suitable for through-hole mounting. It has a maximum Junction Temperature (Tj) of 150°C and a Storage Temperature range of -55°C to +150°C. The 2SC2078 is rated for 1.2W of Collector Power Dissipation at Tc=50°C, with a higher rating of 10W under unspecified conditions.
Applications for the 2SC2078 include RF power amplification at 27MHz. It is important to note that Sanyo products are not intended for applications requiring extremely high levels of reliability, such as life-support systems or aircraft control systems, where failure could result in serious damage.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (Vce) for the 2SC2078 is 80V.
The maximum continuous Collector Current (Ic) for the 2SC2078 is 3A, with a pulse capability of 5A.
The 2SC2078 transistor is available in a TO-220AB package.
The 2SC2078 is designed for 27MHz RF Power Amplifier applications.
The 2SC2078 has a Collector Power Dissipation (Pc) of 1.2W at a case temperature of 50°C, and a rating of 10W under unspecified conditions.