2SC1947

The Mitsubishi Electric 2SC1947 is a Silicon NPN Transistor, identified by part number 2SC1947. This component is suitable for RF power and VHF mobile radio applications. It features a maximum collector current of 1A and a maximum operating temperature of 175°C. The transistor has a collector-emitter voltage rating of 35V, as indicated in datasheet extracts, though manufacturer pages list 17V. Power dissipation is rated at 1W maximum, with another specification indicating 10W.

This NPN transistor is part of the Bipolar Junction Transistor (BJT) family, specifically categorized under single transistors. Its application in RF power and VHF mobile radio suggests its use in communication systems and amplification circuits where high-frequency performance is critical. Further details on specific electrical characteristics, such as saturation voltage and current gain, would typically be found in the datasheet.

While compliance information such as RoHS status is listed as 'RoHS3 Compliant', 'REACH Unaffected', and MSL as '1 Unlimited', these are noted as unverified. The component is manufactured by Mitsubishi Electric, a known producer of semiconductor devices.