| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,992 pcs
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2992 pcs | On Request | 1 | On Request | On Request | 0442 | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC1815 from Toshiba is a silicon NPN transistor manufactured using the epitaxial planar process. It is designed for general-purpose amplifier applications. This transistor comes in a TO-92 package, suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of up to 150mA. The power dissipation is rated at 400mW at 25°C ambient temperature. The operating and storage junction temperature range is from -55°C to +125°C.
Electrical specifications include a collector-emitter saturation voltage (VCE(SAT)) of 0.25V maximum at 100mA collector current and 10mA base current. The DC current gain (hFE) for the standard 2SC1815 ranges from 70 to 700 when tested at 6.0V collector-emitter voltage and 2.0mA collector current. The transition frequency (fT) is a minimum of 80MHz at 10V collector-emitter voltage and 1.0mA collector current.
Environmental compliance data indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. The transistor is marked with its full part number.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
TO-92 through-hole package.
-55°C to +125°C.
150mA.
0.25V at IC=100mA, IB=10mA.
O: 70-140, Y: 120-240, GR: 200-400, BL: 350-700.