| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,079 pcs
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1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC1815 series from Micro Electronics Ltd are silicon NPN transistors manufactured using the epitaxial planar process. They are designed for general purpose amplifier applications.
Key electrical characteristics include a collector-emitter voltage (V CEO) of 50V and a continuous collector current (I C) of up to 150mA. The device offers a DC current gain (hFE) ranging from 70 to 700, depending on the specific variant. Its transition frequency (fT) is 80MHz at 10V and 1mA.
This transistor is housed in a TO-92 package, suitable for through-hole mounting. The operating and storage junction temperature range is -55°C to +125°C.
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status. These specifications make the 2SC1815 a versatile component for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (V CEO) of the 2SC1815 is 50V.
The maximum continuous collector current (I C) for the 2SC1815 is 150mA.
The DC current gain (hFE) for the 2SC1815 ranges from 70 to 700 under typical test conditions.
The 2SC1815 is supplied in a TO-92 package.
The operating and storage junction temperature range for the 2SC1815 is -55°C to +125°C.