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22 pcs
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22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC1580 from Sanken is a Silicon NPN Power Transistor designed for various electronic applications. It offers a high collector-emitter breakdown voltage of 500V and an emitter-base breakdown voltage of 7V.
Key electrical characteristics include a collector-emitter saturation voltage of 1.5V and a base-emitter saturation voltage of 2V at specific current levels. The DC current gain (hFE) ranges from 10 to 25 under test conditions of 5A collector current and 4V collector-emitter voltage. The transition frequency (fT) is a minimum of 5MHz at 0.5A collector current and 10V collector-emitter voltage.
This transistor has a collector cut-off current (ICBO) and emitter cut-off current (IEBO) of 0.1mA maximum. It is specified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited, indicating it is suitable for general electronic assembly processes.
Designed for power switching and amplification tasks, the 2SC1580 is a reliable component for engineers working on power supply circuits, audio amplifiers, and other general-purpose electronic designs requiring a robust NPN transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 500V.
The DC current gain (hFE) is typically 25, with a minimum of 10.
The transition frequency is a minimum of 5MHz.
The 2SC1580 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.