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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC1382 is a silicon NPN bipolar junction transistor (BJT) housed in a TO126 package. This component is designed for through-hole mounting and offers a maximum collector-emitter voltage (Vce) of 80V and a maximum collector current (Ic) of 0.75A.
Key electrical specifications include a typical forward current transfer ratio (hFE) of 120 and a minimum hFE of 70. The transition frequency (ft) is 50 MHz under test conditions of Vce = 2.0V and Ic = 150mA. The maximum collector power dissipation (Pd) is 0.8W, with a maximum operating junction temperature (Tj) of 175°C and a maximum ambient operating temperature (Topr) of 150°C.
This transistor is suitable for a range of electronic circuits requiring amplification or switching capabilities. Its TO126 package facilitates easy integration into circuit boards via through-hole assembly. The component's specifications suggest its utility in intermediate power applications where its voltage and current ratings are appropriate.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the 2SC1382 is 80V.
The maximum collector current (Ic max) for the 2SC1382 is 0.75A.
The typical forward current transfer ratio (hFE) for the 2SC1382 is 120.
The 2SC1382 transistor comes in a TO126 package.
The maximum operating temperature (Topr) for the 2SC1382 is 150°C.