2SC1030 The CDIL 2SC1030 is a silicon NPN power transistor designed for low frequency power amplifier applications. It features a TO-3 package and a wide area of safe operation.
Mfr Part #:

2SC1030

Available from 1 distributors
Mfr Name: Continental Device India (CDIL)
Continental Device India (CDIL)
The CDIL 2SC1030 is a silicon NPN power transistor designed for low frequency power amplifier applications. It features a TO-3 package and a wide area of safe operation.
✓ Total Stock: 24 pcs
$ Price Range: $0.99

2SC1030 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
24 pcs
24 pcs On Request 1 On Request On Request On Request On Request On Request

2SC1030 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Operating Temperature
Storage Temperature

2SC1030 Description

Short technical summary and product information.

The 2SC1030 from CDIL is a silicon NPN power transistor housed in a TO-3 package. This component is engineered for low frequency power amplifier applications and offers a wide area of safe operation.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 80V and a collector current (IC) of up to 6A. The collector-emitter saturation voltage (VCEsat) is a maximum of 1.5V at 5A collector current and 1A base current. The DC current gain (hFE) ranges from 35 to 200 at 1A collector current and 5V VCE, with a minimum of 22 at 5A collector current and 5V VCE. The transition frequency (fT) is a minimum of 10 MHz at 1A collector current and 5V VCE.

 

Absolute maximum ratings specify a collector-base voltage (VCBO) of 150V and an emitter-base voltage (VEBO) of 5V. Collector power dissipation (PC) is rated at 50W at 25°C case temperature. The junction temperature (Tj) is 150°C, and storage temperature ranges from -55°C to 150°C.

 

This transistor is suitable for through-hole mounting. Its specifications make it a reliable choice for various power amplification tasks in electronic circuits.

2SC1030 Quick Information

Product Type: NPN Transistor
Canonical Name: 2SC1030 Silicon NPN Power Transistor
Subcategory: NPN

2SC1030 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC1030 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC1030 Features

  • Silicon NPN power transistor.
  • Rated for 80V collector-emitter voltage.
  • Handles up to 6A collector current.
  • TO-3 package for through-hole mounting.
  • Suitable for low frequency amplification.

2SC1030 Applications

  • Used in high-voltage switching circuits
  • Suitable for amplification applications
  • Ideal for power switching modules
  • Applicable in high-speed electronic circuits

2SC1030 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2SC1030?

The maximum collector-emitter voltage (VCEO) for the 2SC1030 is 80V.

What is the maximum collector current the 2SC1030 can handle?

The 2SC1030 can handle a maximum collector current (IC) of 6A.

What type of package is the 2SC1030 in?

The 2SC1030 is supplied in a TO-3 package.

What is the operating junction temperature range for the 2SC1030?

The operating junction temperature (Tj) for the 2SC1030 is a maximum of 150°C.

What is the DC current gain (hFE) of the 2SC1030 at IC=1A?

The DC current gain (hFE-1) at IC=1A and VCE=5V ranges from 35 to 200.

What is the transition frequency (fT) of the 2SC1030?

The transition frequency (fT) of the 2SC1030 is a minimum of 10 MHz at IC=1A and VCE=5V.

Home

Categories