| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC1030 from CDIL is a silicon NPN power transistor housed in a TO-3 package. This component is engineered for low frequency power amplifier applications and offers a wide area of safe operation.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 80V and a collector current (IC) of up to 6A. The collector-emitter saturation voltage (VCEsat) is a maximum of 1.5V at 5A collector current and 1A base current. The DC current gain (hFE) ranges from 35 to 200 at 1A collector current and 5V VCE, with a minimum of 22 at 5A collector current and 5V VCE. The transition frequency (fT) is a minimum of 10 MHz at 1A collector current and 5V VCE.
Absolute maximum ratings specify a collector-base voltage (VCBO) of 150V and an emitter-base voltage (VEBO) of 5V. Collector power dissipation (PC) is rated at 50W at 25°C case temperature. The junction temperature (Tj) is 150°C, and storage temperature ranges from -55°C to 150°C.
This transistor is suitable for through-hole mounting. Its specifications make it a reliable choice for various power amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC1030 is 80V.
The 2SC1030 can handle a maximum collector current (IC) of 6A.
The 2SC1030 is supplied in a TO-3 package.
The operating junction temperature (Tj) for the 2SC1030 is a maximum of 150°C.
The DC current gain (hFE-1) at IC=1A and VCE=5V ranges from 35 to 200.
The transition frequency (fT) of the 2SC1030 is a minimum of 10 MHz at IC=1A and VCE=5V.