| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB951 is a PNP bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components. It is designed for various electronic applications requiring a PNP transistor with specific electrical characteristics.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of -60V, a maximum collector-base voltage (VCB) of -60V, and a maximum emitter-base voltage (VEB) of -7V. The continuous collector current (Ic) is rated at -8A, and the device can dissipate up to 45W of power. The DC current gain (hFE) ranges from 2000 to 5000, and it has a minimum transition frequency (fT) of 20MHz.
This transistor operates within a junction temperature range of -55 to +150°C. It is housed in a TO-220F package, suitable for through-hole mounting.
The 2SB951 is a complementary NPN transistor to the 2SD1277-Q and can be replaced by a wide range of equivalent or substitute parts, including the 2N6040 series, BD series, and TIP series transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SB951 transistor is -60V.
The 2SB951 has a continuous collector current rating of -8A.
The DC current gain (hFE) for the 2SB951 ranges from 2000 to 5000.
The operating junction temperature range for the 2SB951 is -55 to +150°C.
The 2SB951 transistor is supplied in a TO-220F package.